Essential Modules

During the course work in semester one and two the students have to complete 6 core modules and 2 laboratory modules. Each module has 45 contact hours. They will take place at facilities at NTU/NUS by Professors of TUM or NTU/NUS.

module code module name lecturers hours sem NM 6606 Integrated Circuit Manufacturing Prof Walter Hansch,                  Mr Thomas Maul 45 1 NM 6601 Microfabrication Technology Prof Tse Man Siu,                   Prof Sundaram Swaminathan 45 1 NM 6602 Quality & Reliability Engineering Prof Ang Diing Shenp,                Prof Pey Kin Leong 45 2 NM 6603 Modern Semiconductor Device Prof Zhang Dao Hua 45 2 NM 6607 Optomechatronic Measurement Systems Prof Koch 45 2 NM 6608 Physical Electronics Prof Wachutka 45 2 module code module name experiments lecturers hours sem NM 6604 Lab 1 : Semiconductor Process & Device Simulation Computer Simulation Prof Peonar Daniel Puiu, Prof Zhou Xing 45 1 NM 6605 Lab 2: Design & Modeling of Nanodevices Computer Simulation Prof Ang Lay Kee,       Prof Fan Weijun 45 2

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Elective Modules

module code module name lecturers hours sem NM 6613 ULSI Technology (NTU) Prof Tang Xiaohong,                Prof Wang Hong 45 1 NM 6611 Failure Mechanisms & Device Characterization (NTU) Prof Mei Ting,                           Prof Wong Kin Shun 45 2 NM 6616 Nanoelectronics (TUM) Prof Paolo Lugli 45 2 NM 6617 Advanced MOSFET & Novel Devices (TUM) Prof Walter Hansch 45 2

No registration is required. Electives will be completed in two weeks each. The exam will be at the end of each elective.

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Cross-discipline Modules

module code module name lecturers hours sem CD 5131 International Patent Law Dr Andreas Respondek 10 1 CD 5180 Selected Topics in Management Methods Dr Charles Chow 10 1 NM 6062 Business & Technical English Ms Lily Chan, Dr Noela Murphy 80 2 CD 5030 Aspects of European and Asian History and Culture Dr Tanja Woebs 10 2 CD 5170 Selected Topics in Business Administration Dr Michael Rossbach 10 2

For graduation, a student must obtain a minimum cumulative average points of 2.5 (equivalent to average grade of C+) of all the technical modules, pass enrichment subject, all cross discipline modules and MSc thesis report as well as completion of internship with the submission of report.

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Core Modules

Integrated Circuit Manufacturing

The students will learn , how ICs can be fabricated for 2 US$ and below, although modern Semiconductor-Fabs have invest-costs of billions of dollars and daily fabrication costs of millions of dollars; discussion of classical and modern production models such as Inventory models or Just-in-Time; brief overview on semiconductor technology, processes and tools of chip fabrication; discussion of special features in a wafer fab like fabrication in lots, automatisation and work flow; detailed investigations in factory dynamics: describing the physical behavior of a wafer fabrication line by equations, 4-partner model, queuing theory, the laws and performance parameters (such as capacity, cycle time, utilization) for evaluation of fab productivity, dreams and nightmares of managers; overall equipment and factory efficiency (OEE, OFE); quality management with design of manufacturability, machine capability investigations, design of experiments, statistical process control; verification of the courses findings by a student experiment called "Penny-Fab".

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Microfabrication Technology

Advanced gate oxide formation. Thin film deposition. Lithography and resist. Technology etching process and technology process. Integration metrology and analytical techniques. Kow-k dielectrics. Chemical and mechanical polishing (CMP) cleaning technology.

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Quality and Reliability Engineering

Quality management and planning. Statistical process control. Design of experiments. Basic reliability statistics. Application of reliability statistics.

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Modern Semiconductor Devices

Bipolar transistor operation pinciples. Bipolar device modeling. State-of-the-art bipolar structures. CMOS device scaling effects. Semiconductor memories. Future trends and challenges.

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Optomechatronic Measurement Systems

Interaction of microelectronics, micromechanics and microotics. Properties of light. Laser-based measurement systems. Optical interferometry. Wafer surface analysis. Shape and deformation measurement. Stress measurement. Stress sensors. Optical waveguides. Application-oriented measurement devices.

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Physical Electronics

Basic energy-domain coupling effects in solid-state microstructured electronic and micromechatronical devices and their application fields. Characteristic properties of semiconductor materials. Solid-state devices under nearequilibrium peration conditions.

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Elective Modules

ULSI Technology

Advanced MOS structures and process technology. Advanced bipolar transistors and process technology. Advanced bipolar transistors and process technology. MOS scaling rules and small geometry effects. CMOS latch up. Isolation and dielectrics.

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Failure Mechnaisms and Device Characterization

Introduction to Failure Mechanisms. Bulk failure mechanism of semiconductor devices. Dielectric failure mechanisms of semiconductor devices. Metallization failure mechanisms of semiconductor devices. Interface failure mechanisms of semiconductor devices. Reliability testing.

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Nano-Electronics

Low dimensional structures: quantum wells, quantum wires and quantum dots. Electronic, optical, transport porperties of nanostructures. Quantum semiconductor devices. Fabrication and characterization techniques of nanotechnology. Applications of nanostructures, nanodevices and nanosytems. The bottom-up approach to nanotechnology: introduction to molecular electronics and optoelectronics. Organic materials for electronics: self-assembled monolayers; conducting polymers; carbon nanotubes. Circuit implementations and architectures for nanostructures: quantum cellular automata and cellular non linear networks. Introduction to quantum computing.

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Advanced MOSEFT & Novel Devices

Historical development of mainstream MOSFETs until today: economical, technological and physical fundamentals. Properties of long channel and short channel MOSFETs. Hot carrier effects, scaling rules, basic of charge carrier transport (quantum-mechanical, hydro-dynamics, ballistics). Proposed new MOSFET structures (vertical MOSFETs, double-gate, fully-depleted MOSFETs). Hot-electron transistors, tunnelling transistors, low-dimensional devices, single-electron transistor, single-electron memories, quantum-electronics.

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